Organic light emitting diode display device

ABSTRACT

An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional application based on pending application Ser. No.14/805,533, filed Jul. 22, 2015, the entire contents of which is herebyincorporated by reference.

Korean Patent Application No. 10-2015-0007457, filed on Jan. 15, 2015,in the Korean Intellectual Property Office, and entitled: “Organic LightEmitting Diode Display Device,” is incorporated by reference herein inits entirety.

BACKGROUND 1. Field

Embodiments relate to an organic light emitting diode display device.

2. Description of the Related Art

A flat panel display (FPD) such as, for example, a liquid crystaldisplay (LCD), an organic light emitting diode display (OLED), or anelectrophoretic display (EPD), may include a display panel including anelectric field generating electrode and an electro-optical active layer.As the electro-optical active layer, each of panels of the organic lightemitting diode display, the liquid crystal display, and theelectrophoretic display may include an organic emission layer, a liquidcrystal layer, and particles charged with electric charges. The electricfield generating electrode may be connected to a switching device suchas, for example, a thin film transistor, to receive a data signal, andthe electro-optical active layer may convert the data signal into anoptical signal to display an image.

SUMMARY

Embodiments may be realized by providing an organic light emitting diodedisplay device, including a flexible substrate; pixels on the flexiblesubstrate, the pixels including an organic emission layer; a pixeldefinition layer between the pixels, the pixel definition layerincluding openings; an encapsulation layer covering the pixels; and aconductive light shielding member on the encapsulation layer, theconductive light shielding member not overlapped with the pixels, andoverlapped with the pixel definition layer.

The pixels may be in a matrix form.

The conductive light shielding member may include a carbon black and apolymer organic material.

A content of carbon black in the conductive light shielding member maybe 30 weight % or less.

The conductive light shielding member may be formed by an inkjetprinting method.

The conductive light shielding member may be electrically connected to aground electrode of a pad part outside the encapsulation layer.

Embodiments may be realized by providing an organic light emitting diodedisplay device, including a flexible substrate; a semiconductor layer onthe flexible substrate; a gate insulating layer on the semiconductorlayer; a gate electrode on the gate insulating layer; an interlayerinsulating layer on the gate electrode; a source electrode and a drainelectrode on the interlayer insulating layer; a pixel electrodeelectrically connected to the drain electrode; organic emission layerson the pixel electrode and pixel definition layers between the organicemission layers, the pixel definition layers not overlapped with theorganic emission layers; a common electrode on the organic emissionlayers and the pixel definition layers; and an encapsulation layercovering the common electrode, the gate electrode, the source electrode,and the drain electrode each being a shielding electrode having lowreflection characteristics.

Each shielding electrode may include a copper (Cu) layer, an indium zincoxide (IZO) layer, and a titanium (Ti) layer that are sequentiallyformed.

Each shielding electrode may include a mixture of two or more of copper(Cu), copper nitride (CuN_(x)), titanium (Ti), titanium nitride(TiN_(x)), titanium oxide (TiO_(x)), molybdenum nitride (MoN_(x)),indium zinc oxide (IZO), and indium tin oxide (ITO).

Each shielding electrode may be electrically connected to a groundelectrode of a pad part outside the encapsulation layer.

Embodiments may be realized by providing an organic light emitting diodedisplay device, including an upper substrate; and a lower substratefacing the upper substrate, the lower substrate having pixels thereon,the pixels including an organic emission layer, a low reflection opaquemetal layer being formed in a non-pixel area that is not overlapped withthe pixels at an inner side of the upper substrate.

The low reflection opaque metal layer may include a copper (Cu) layer,an indium zinc oxide (IZO) layer, and a titanium (Ti) layer that aresequentially formed.

The low reflection opaque metal layer may include a mixture of two ormore of copper (Cu), copper nitride (CuN_(x)), titanium (Ti), titaniumnitride (TiN_(x)), titanium oxide (TiO_(x)), molybdenum nitride(MoN_(x)), indium zinc oxide (IZO), and indium tin oxide (ITO).

The organic light emitting diode display device may include anencapsulation layer covering the pixels. The low reflection opaque metallayer may be electrically connected to a ground electrode of a pad partoutside the encapsulation layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIG. 1 illustrates a layout diagram of pixels of an organic lightemitting diode display device according to an exemplary embodiment;

FIG. 2, which illustrates a cross-sectional view taken along line A-A ofFIG. 1, illustrates a diagram of a first exemplary embodiment;

FIG. 3, which illustrates a cross-sectional view taken along line A-A ofFIG. 1, illustrates a diagram of a second exemplary embodiment; and

FIG. 4, which illustrates a cross-sectional view taken along line A-A ofFIG. 1, illustrates a diagram of a third exemplary embodiment.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the following detailed description, only certain exemplaryembodiments have been shown and described, simply by way ofillustration. As those skilled in the art would realize, the describedembodiments may be modified in various different ways.

Throughout the specification, unless explicitly described to thecontrary, the word “comprise” and variations such as “comprises” or“comprising”, will be understood to imply the inclusion of statedelements but not the exclusion of any other elements.

In the drawings, the thickness of layers, films, panels, regions, etc.,may be exaggerated for clarity. Like reference numerals designate likeelements throughout the specification. It will be understood that whenan element such as a layer, film, region, or substrate is referred to asbeing “on” another element, it can be directly on the other element orintervening elements may also be present. To the contrary, it will beunderstood that when any element is referred to as being “directly on”another element, an element may be not present therebetween.

Further, it will be understood that when a layer is referred to as being“under” another layer, it can be directly under, and one or moreintervening layers may also be present. In addition, it will also beunderstood that when a layer is referred to as being “between” twolayers, it can be the only layer between the two layers, or one or moreintervening layers may also be present.

An exemplary embodiment will hereinafter be described in detail withreference to the accompanying drawings.

FIG. 1 illustrates a layout diagram of pixels of an organic lightemitting diode display device according to an exemplary embodiment, andFIG. 2, which illustrates a cross-sectional view taken along line A-A ofFIG. 1, illustrates a diagram of a first exemplary embodiment.

As shown in FIG. 1, an organic light emitting diode display deviceaccording to an exemplary embodiment may include a red pixel PXr, agreen pixel PXg, and a blue pixel PXb in a unit pixel PX.

The red pixel PXr and the green pixel PXg may be positioned adjacent toeach other in a horizontal direction, and the blue pixel PXb may bepositioned below the red pixel PRx and the green pixel PXg. The redpixel PXr and the green pixel PXg may have a narrow width unlike theblue pixel PXb, and the blue pixel Pb may have a wide widthcorresponding widths of the red pixel PXr and the green pixel PXg and aninterval between two pixels. Pixel arrangements in unit pixels PXs shownin FIG. 1 may be various according to an exemplary embodiment.

The unit pixels PXs having the structure as described above may bearranged in a matrix form depending on a row and a column.

A light shielding member 500 may be formed between neighboring unitpixels PXs. The light shielding member 500 may be formed of a latticestripe pattern corresponding to a pixel definition layer 330 at aboundary part between the pixels PXs and may serve as a black matrix tohelp prevent leakage of light between the pixels PXs to help increasesharpness of the pixels PXs.

The light shielding member 500 may contain a carbon black, which may bean inorganic black material, and a polymer organic materialcorresponding to one or a mixture of two of polyacrylate, polystyrene,and polyethylene. A content of the carbon black may be 30 weight % orless, a content of the polymer organic material may be 80 weight % orless, and the light shielding member 500 may be formed by an inkjetprinting method.

First, structures of the pixels (red pixel (PXr), green pixel (PXg), andblue pixel (PXb)) as shown in FIG. 2 will be described.

One pixel may include an organic emission layer 300, a pixel electrode190 may be positioned beneath the organic emission layer 300, and acommon electrode 270 may be positioned on the organic emission layer300. The pixel electrode 190 may be an electrode separated per pixel,and the common electrode 270 may be an electrode formed integrally inall of the pixels.

The pixel electrode 190 may be connected to an output terminal (drainelectrode 175 a) of a thin film transistor such as a driving transistorTDR to receive an output current of the driving transistor TDR. The thinfilm transistor such as the driving transistor TDR may include apolycrystalline semiconductor layer 150 a, a gate electrode 124 a, asource electrode 173 a, and the drain electrode 175 a.

One pixel may include a pixel capacitor CPX connected to the sourceelectrode 173 a and the gate electrode 124 a of the driving transistorTDR. The pixel capacitor CPX may include a lower capacitor electrode 155a formed of a doped polycrystalline semiconductor, an upper capacitorelectrode 125 a formed of the same material as that of the gateelectrode 124 a on the same layer as that of the gate electrode 124 a,and a gate insulating layer (GIL), which may be an insulating layerpositioned between the lower gate electrode 155 a and the uppercapacitor electrode 125 a. According to an exemplary embodiment, thepixel capacitor CPX may include an upper capacitor electrode 125 a and acapacitor electrode overlapped with the upper capacitor electrode 125 awith an interlayer insulating layer 180 interposed therebetween or mayfurther include the capacitor electrode, and any one capacitor electrodemay also be formed on a layer different from an illustrated layer.

Layer structures of a pixel area including the components as describedabove will be sequentially described below.

A lower substrate 110 may be a flexible substrate such as a polymerfilm. In an embodiment, the lower substrate 110 may be formed ofthermoplastic semicrystalline polymer such as, for example, polyethyleneterephthalate (PET), polyethylene naphthalate (PEN), or polyethyleneether ketone (PEEK), thermoplastic amorphous polymer such as, forexample, polycarbonate (PC) or polyethylene sulfonate (PES), or plasticsuch as, for example, polyimide (PI) or polyarylate (PAR), havingrelatively high heat resistance.

A buffer layer 115 may be formed on the lower substrate 110 to helpprevent invasion of, for example, moisture or oxygen. The buffer layer115 may contain, for example, silicon nitride (SiN_(x)), silicon oxide(SiO_(x)), or silicon oxynitride (SiO_(x)N_(y)), and may be formed as asingle layer or a multilayer. An overcoat layer may also be formed onthe buffer layer 115 to help protect the buffer layer 115.

The driving transistor TDR and a switching transistor TSW may bedisposed on the buffer layer 115, and may be spaced apart from eachother. The polycrystalline semiconductor layer 150 a of the drivingtransistor TDR and the lower capacitor electrode 155 a, which may be thedoped polycrystalline semiconductor, may be formed on the buffer layer115.

The polycrystalline semiconductor layer 150 a may include the sourceelectrode 173 a and the drain electrode 175 a disposed at both edgesthereof, wherein the source electrode 173 a and the drain electrode 175a may be doped with impurities. The doped polycrystalline semiconductorforming the lower capacitor electrode 155 a may have characteristics ofa conductor rather than characteristics of a semiconductor due highconcentration doping. The buffer layer 115 may help block impuritiesfrom being introduced from the lower substrate into the semiconductor atthe time of performing a crystallization process to form apolycrystalline semiconductor.

The switching transistor TSW may have the same structure as that of thedriving transistor TDR. A polycrystalline semiconductor layer 150 b maybe formed on the buffer layer 115 formed on the lower substrate 110. Asource electrode 173 b and a drain electrode 175 b may be formed at bothedges of the polycrystalline semiconductor layer 150 b.

The polycrystalline layers 150 a and 150 b and the exposed buffer layer115 may be covered by a first gate insulating layer 130. The gateinsulating layer GIL may be formed in a multilayer structure includingthe first gate insulating layer 130 and a second gate insulating layer140 formed of an inorganic material or an organic material.

The lower capacitor electrode 155 a and a gate electrode 124 b of theswitching transistor TSW may be formed on the first gate insulatinglayer 130. The upper capacitor electrode 125 a and the gate electrode124 a of the driving transistor TDR may be formed on the second gateinsulating layer 140. The gate electrode 124 a may be overlapped with aportion of the polycrystalline semiconductor layer 150 a, and the uppercapacitor electrode 125 a may be overlapped with the lower capacitorelectrode 155 a.

An interlayer insulating layer 180 may be formed on the gate electrode124 a of the driving transistor TDR, the upper capacitor electrode 125a, and the exposed second gate insulating layer 140. The interlayerinsulating layer 10 may be formed of an organic material or an inorganicmaterial.

The interlayer insulating layer 180 and the gate insulating layer GILmay expose a source region and a drain region of the polycrystallinesemiconductor layer 150 a through contact holes. The source electrode173 a and the drain electrode 175 a may be formed on the interlayerinsulating layer 180 and in the contact hole. The source electrode 173 amay contact the source region of the polycrystalline semiconductor layer150 a, and the drain electrode 175 a may contact the drain region of thepolycrystalline semiconductor layer 150 a.

A passivation layer 185 may be formed on the source electrode 173 a, thedrain electrode 175 a, and the interlayer insulating layer 180. Thepassivation layer 185 may be formed of an organic material or aninorganic material. The passivation layer 185 may have a contact holeformed therein to expose the drain electrode 175 a. The pixel electrode190 may be formed on the passivation layer 185 and in the contact hole.The pixel electrode 190 may be connected to the drain electrode 175 athrough the contact hole.

A pixel definition layer (PDL) 330 may be formed in the vicinity of thepixel electrode 190, and may include a plurality of openingscorresponding to a pixel. The pixel definition layer 330 may be formedof a resin such as, for example, a polyacrylate or a polyimide. Thepixel electrode 190 may be exposed in portions in which the pixeldefinition layer 330 is not formed, and the organic emission layer 300may be positioned on the pixel electrode 190. The organic emission layer300 may include an emission layer (EML), may be formed of a plurality oflayers including one or more of a hole injection layer (HIL), a holetransport layer (HTL), an electron transport layer (ETL), and anelectron injection layer (EIL), and may emit different colors dependingon a kind of organic materials.

The common electrode 270 may be formed on the organic emission layer 300and the pixel definition layer 330. The common electrode 270 may beformed of a double layer including an upper layer and a lower layer, andmay have transreflective characteristics by which it reflects a portionof light thereon and transmits the other portion of the lighttherethrough.

The pixel electrode 190, the organic emission layer 300, and the commonelectrode 270 may configure a light emitting device (LD) for displayingan image in the organic light emitting diode display device. The pixelelectrode 190 may become an anode of the light emitting device, and thecommon electrode 270 may become a cathode of the light emitting device.

A capping layer 410 may be formed on the common electrode 270, and anencapsulation layer 420 may be formed on the capping layer 410. Thecapping layer 410 may be formed over an entire surface of the commonelectrode 270 to help protect the common electrode 270.

The light shielding member 500 may be formed on one surface of theencapsulation layer 420. The light shielding member 500 may be formed ina non-pixel area corresponding to the pixel definition layer 330 withoutbeing overlapped with the openings corresponding to the pixel.

The light shielding member 500 may be electrically connected to a groundelectrode 124 c of a pad part through a ground connection wiring 127,and the light shielding member 500 may effectively shield anelectromagnetic wave and static electricity generated by the organiclight emitting diode display device.

Next, a second exemplary embodiment will be described with reference toFIG. 3.

FIG. 3, which illustrates a cross-sectional view taken along line A-A ofFIG. 1, illustrates a diagram of a second exemplary embodiment.

An organic light emitting diode display device according to a secondexemplary embodiment is different from the organic light emitting diodedisplay device according to a first exemplary embodiment only in that ashielding member 510 having a rear surface light emitting structure maybe used instead of the light shielding member 500 having a front surfacelight emitting structure, and may have a structure of a pixel that isthe same as that of the pixel of the organic light emitting diodedisplay device according to a first exemplary embodiment. The samecomponents will be denoted by the same reference numerals, and anoverlapped description for the same components will be omitted.

In the organic light emitting diode display device according to a secondexemplary embodiment, gate electrode 124 a, 124 b, and 124 c, sourceelectrode 173 a and 173 b, and drain electrode 175 a and 175 b may beformed of shielding electrodes having low reflection characteristics.

The shielding electrode may include, for example, a copper (Cu) layer,an indium zinc oxide (IZO) layer, and a titanium (Ti) layer that aresequentially formed. The shielding electrode may be formed of a mixtureof two or more of copper (Cu), copper nitride (CuN_(x)), titanium (Ti),titanium nitride (TiN_(x)), titanium oxide (TiO_(x)), molybdenum nitride(MoN_(x)), indium zinc oxide (IZO), and indium tin oxide (ITO).

The shielding electrode may be electrically connected to the groundelectrode of the pad part positioned outside the encapsulation layer,and the light electrode may effectively shield an electromagnetic waveand static electricity generated by the organic light emitting diodedisplay device, similar to the light shielding member 500.

Next, a third exemplary embodiment will be described with reference toFIG. 4.

FIG. 4, which illustrates a cross-sectional view taken along line A-A ofFIG. 1, illustrates a diagram of a third exemplary embodiment.

An organic light emitting diode display device according to a thirdexemplary embodiment is different from the organic light emitting diodedisplay device according to a second exemplary embodiment only in thatit may include an upper substrate and a lower substrate formed of arigid material such as glass, and may have a structure of a pixel thatis the same as that of the pixel of the organic light emitting diodedisplay device according to a second exemplary embodiment. The samecomponents will be denoted by the same reference numerals, and anoverlapped description for the same components will be omitted.

As shown in FIG. 4, an organic light emitting diode display deviceaccording to a third exemplary embodiment may include an upper substrate105 and a lower substrate 110 facing each other.

The upper substrate 105 and the lower substrate 110 are transparentinsulation substrates formed of, for example, glass or plastic.

Buffer layers 115 may be formed at an inner side of the upper substrate105 and on the lower substrate 110, respectively. The buffer layer 115may contain, for exmaple, silicon nitride (SiN_(x)), silicon oxide(SiO_(x)), or silicon oxynitride (SiO_(x)N_(y)), and may be formed as asingle layer or a multilayer. The buffer layer 115 may help preventpermeation of impurities, moisture, or external air degradingcharacteristics of a semiconductor and planarize a surface. According toan exemplary embodiment, the buffer layer 115 may also be positioned inthe upper substrate 105 or the lower substrate 110. For example, theupper substrate 105 and the lower substrate 110 may have a structure inwhich polymer films (plastic layers) and the buffer layers arealternately stacked as a multilayer.

A semiconductor layer 150, a gate insulating layer (GIL), an interlayerinsulating layer 180, a passivation layer 185, and a pixel electrode 190may be formed on the lower substrate 110, as in first and secondexemplary embodiments.

A pixel definition layer 330 may be formed in the vicinity of the pixelelectrode 190, and may include a plurality of openings corresponding toone pixel. The pixel electrode 190 may be exposed in portions in whichthe pixel definition layer 330 is not formed, and the organic emissionlayer 300 may be positioned on the pixel electrode 190.

A low reflection opaque metal layer 230 may be formed in a non-pixelarea that is not overlapped with the organic emission layer 300 at theinner side of the upper substrate 105. The low reflection opaque metallayer 230 may be formed in an area corresponding to an area in which thepixel definition layer 330 of the lower substrate 110 may be positioned.This may cover the opening of the pixel definition layer 330 since theopening may be an area in which the organic emission layer may emitlight.

The low reflection opaque metal layer 230 may include, for example, acopper (Cu) layer, an indium zinc oxide (IZO) layer, and a titanium (Ti)layer that are sequentially formed. The low reflection opaque metallayer 230 may be formed of a mixture of two or more selected of copper(Cu), copper nitride (CuN_(x)), titanium (Ti), titanium nitride(TiN_(x)), titanium oxide (TiO_(x)), molybdenum nitride (MoN_(x)),indium zinc oxide (IZO), and indium tin oxide (ITO).

The low reflection opaque metal layer 230 may be electrically connectedto the ground electrode of the pad part positioned outside theencapsulation layer, and the low reflection opaque metal layer 230 mayeffectively shield an electromagnetic wave and static electricitygenerated by the organic light emitting diode display device.

By way of summation and review, an organic light emitting diode displayhaving self-light emitting characteristics may include two electrodesfacing each other and an organic layer interposed between the twoelectrodes. In the organic light emitting diode display, holes injectedfrom an anode and electrons injected from a cathode may meet each otherin an emission layer to generate excitons, the excitons may emit lightand may be extinguished, and light may be generated.

An organic light emitting diode display may not require a light sourceunlike the liquid crystal display, and a thickness and a weight of thedisplay panel may be decreased. An organic light emitting diode displaymay have desirable characteristics such as, for example, low powerconsumption, high luminance, and a high reaction speed. An organic lightemitting diode display may also be manufactured to be bendable using aplastic substrate.

In a display device, an electromagnetic wave harmful to the human bodymay be generated. To help shield the electromagnetic wave, a blackmatrix having improved conductivity may be used. A rigid substrate suchas glass may be used, which may not be applied to a flexible display.Chrome (Cr) and chrome oxide may be used, and conductivity of aconducting wire may be decreased, which may be unfavorable in shieldingan electromagnetic wave.

Provided is an organic light emitting diode display device that mayimprove shielding performance of an electromagnetic wave by increasingconductivity using a conductive black matrix or a low-refractive metal.

As set forth above, according to exemplary embodiments, shieldingperformance of an electromagnetic wave may be improved even in aflexible display, and the flexible device may be utilized for a wearabledevice closely adhered to the human body.

A metal material having low reflection characteristics may be used inwirings of the gate electrode, the source electrode, and the drainelectrode, and an electromagnetic wave shielding effect may bemaximized.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of skill in the art as of thefiling of the present application, features, characteristics, and/orelements described in connection with a particular embodiment may beused singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

1-6. (canceled)
 7. An organic light emitting diode display device,comprising: a flexible substrate; a semiconductor layer on the flexiblesubstrate; a gate insulating layer on the semiconductor layer; a gateelectrode on the gate insulating layer; an interlayer insulating layeron the gate electrode; a source electrode and a drain electrode on theinterlayer insulating layer; a pixel electrode electrically connected tothe drain electrode; organic emission layers on the pixel electrode andpixel definition layers between the organic emission layers, the pixeldefinition layers not overlapped with the organic emission layers; acommon electrode on the organic emission layers and the pixel definitionlayers; and an encapsulation layer covering the common electrode, thegate electrode, the source electrode, and the drain electrode each beinga shielding electrode having low reflection characteristics.
 8. Theorganic light emitting diode display device as claimed in claim 7,wherein each shielding electrode includes a copper (Cu) layer, an indiumzinc oxide (IZO) layer, and a titanium (Ti) layer that are sequentiallyformed.
 9. The organic light emitting diode display device as claimed inclaim 7, wherein each shielding electrode includes a mixture of two ormore of copper (Cu), copper nitride (CuN_(x)), titanium (Ti), titaniumnitride (TiN_(x)), titanium oxide (TiO_(x)), molybdenum nitride(MoN_(x)), indium zinc oxide (IZO), and indium tin oxide (ITO).
 10. Theorganic light emitting diode display device as claimed in claim 7,wherein each shielding electrode is electrically connected to a groundelectrode of a pad part outside the encapsulation layer.
 11. An organiclight emitting diode display device, comprising: an upper substrate; anda lower substrate facing the upper substrate, the lower substrate havingpixels thereon, the pixels including an organic emission layer, a lowreflection opaque metal layer being formed in a non-pixel area that isnot overlapped with the pixels at an inner side of the upper substrate.12. The organic light emitting diode display device as claimed in claim11, wherein the low reflection opaque metal layer includes a copper (Cu)layer, an indium zinc oxide (IZO) layer, and a titanium (Ti) layer thatare sequentially formed.
 13. The organic light emitting diode displaydevice as claimed in claim 11, wherein the low reflection opaque metallayer includes a mixture of two or more of copper (Cu), copper nitride(CuN_(x)), titanium (Ti), titanium nitride (TiN_(x)), titanium oxide(TiO_(x)), molybdenum nitride (MoN_(x)), indium zinc oxide (IZO), andindium tin oxide (ITO).
 14. The organic light emitting diode displaydevice as claimed in claim 11, including an encapsulation layer coveringthe pixels, wherein the low reflection opaque metal layer iselectrically connected to a ground electrode of a pad part outside theencapsulation layer.